395.84 Kb IRF640Abstract: IRF640 SAMSUNG Junction-to-Case Case-to-Sink Junction-to-Ambient MAX TYP MAX 1.0 1.0 80 Unit K/W K/W K/W Mounting surface, IRF640/641/642/643 FEATURES Lower Rds (o n ) Improved inductive ruggedness Fast, Improved high temperature reliability N-CHANNEL POWER MOSFETS PRODUCT SUMMARY Part Number IRF640, Voss Vdgr Vgs Id Id IoM Igm Eas Ias Pd 18 11 72 18 11 72 ± 1.5 580 18 125 1.0 - 5 5 to 150 300 IRF640, d d = 2 5 V, RG= 2 5 il, Starting T j= 2 5 °C eg SAMSUNG Electronics 147 IRF640/641/642 - OCR Scan. 182.6 Kb irf640Abstract: IRF640 P CHANNEL MOSFET ® IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY TM MOSFET TYPE IRF640 P s s s s V DSS 200 V 200 V R DS(on). 105.11 Kb IRF640 moroccoAbstract: irf640 IRF640 IRF640FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF640 IRF640FI s s, ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value IRF640 VD S V DG R V GS Unit IRF640FI, operating area July 1993 1/6 IRF640/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb R th c-s Tl,. 6.5 13 1600 270 50 Max. Unit S 2100 350 70 pF pF pF IRF640/FI ELECTRICAL, Operating Area for TO-220 Safe Operating Area for 3/6 IRF640/FI Thermal Impedance STMicroelectronics Original. 179.35 Kb IRF640 applications noteAbstract: irf640 IRF640, RF1S640SM Data Sheet June 1999 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Title, Components to PC Boards' Symbol BRAND IRF640 wer OSTs) uthor 1585.5 Features These are, integrated circuits.
File Number TO-220AB RF1S640SM TO-263AB D IRF640 RF1S640 G NOTE, ) er OCI O frk ©2001 Fairchild Semiconductor Corporation IRF640, RF1S640SM Rev. A IRF640, RF1S640SM TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings IRF640, RF1S640SM Fairchild Semiconductor Original. 149.87 Kb linear applications of power MOSFET IRF640Abstract: power MOSFET IRF640 IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power, to PC Boards' Symbol BRAND IRF640 TO-220AB RF1S640 TO-262AA RF1S640 RF1S640SM TO-263AB D IRF640 RF1S640 G NOTE: When ordering, use the entire part number. Add the, DRAIN GATE IRF640, RF1S640, RF1S640SM Rev. B IRF640, RF1S640, RF1S640SM TC = 25oC, Unless, Tpkg IRF640, RF1S640, RF1S640SM 200 200 18 11 72 ±20 125 1.0 580 -55 to 150 UNITS V V Fairchild Semiconductor Original.
316.82 Kb power MOSFET IRF640 fpAbstract: irf640 IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAYTM MOSFET TYPE V DSS R DS(on) ID IRF640 IRF640FP 200 V 200 V. 366.51 Kb IRF640 smdAbstract: IRF640 applications note IRF640, IRF640S SYMBOL QUICK REFERENCE DATA 'Trench' technology Low on-state resistance, specification N-channel TrenchMOSTM transistor IRF640, IRF640S AVALANCHE ENERGY LIMITING VALUES, specification N-channel TrenchMOSTM transistor IRF640, IRF640S REVERSE DIODE LIMITING VALUES AND, Semiconductors Product specification N-channel TrenchMOSTM transistor IRF640, IRF640S Normalised, Product specification N-channel TrenchMOSTM transistor IRF640, IRF640S Drain current, ID (A Philips Semiconductors Original. 820.87 Kb irf640Abstract: hexfet irf640 IRF640, Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) Qg (Max, G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF640PbF IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER, apply Document Number: 91036 S-81241-Rev.
A, 07-Jul-08 www.vishay.com 1 IRF640, SiHF640 Vishay, -81241-Rev. A, 07-Jul-08 IRF640, SiHF640 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise Vishay Siliconix Original. 1688.94 Kb IRF640 applications noteAbstract: IRF640 IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM S E M I C O N D U C T O R 16A and 18A, Ordering Information PART NUMBER PACKAGE D BRAND IRF640 TO-220AB IRF640 IRF641 TO, 5-1 File Number 1585.3 IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM TC = 25oC, Unless,. Tpkg IRF640, RF1S640, RF1S640SM 200 200 18 11 72 ±20 125, PARAMETER MIN TYP MAX UNITS IRF640, IRF642, RF1S640, RF1S640SM 200 -V Harris Semiconductor Original.
156.67 Kb irf640Abstract: IRF640 P CHANNEL MOSFET IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640F P.
Related Electronics Part Number Part Number Components Description Html View Manufacturer International Rectifier International Rectifier Sensitron International Rectifier Sensitron International Rectifier International Rectifier Sensitron International Rectifier International Rectifier Datasheet Page Link URL Does ALLDATASHEET help your business so far? All Rights Reserved© 2003 - 2018 Mirror SitesEnglish:Chinese: German: Japanese: Russian: Korean: Spanish: French: Italian: Portuguese: Polish.
Related Electronics Part Number Part Number Components Description Html View Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics Datasheet Page Link URL Does ALLDATASHEET help your business so far? All Rights Reserved© 2003 - 2018 Mirror SitesEnglish:Chinese: German: Japanese: Russian: Korean: Spanish: French: Italian: Portuguese: Polish.
395.84 Kb IRF640Abstract: IRF640 SAMSUNG Junction-to-Case Case-to-Sink Junction-to-Ambient MAX TYP MAX 1.0 1.0 80 Unit K/W K/W K/W Mounting surface, IRF640/641/642/643 FEATURES Lower Rds (o n ) Improved inductive ruggedness Fast, Improved high temperature reliability N-CHANNEL POWER MOSFETS PRODUCT SUMMARY Part Number IRF640, Voss Vdgr Vgs Id Id IoM Igm Eas Ias Pd 18 11 72 18 11 72 ± 1.5 580 18 125 1.0 - 5 5 to 150 300 IRF640, d d = 2 5 V, RG= 2 5 il, Starting T j= 2 5 °C eg SAMSUNG Electronics 147 IRF640/641/642 - OCR Scan. 182.6 Kb irf640Abstract: IRF640 P CHANNEL MOSFET ® IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY TM MOSFET TYPE IRF640 P s s s s V DSS 200 V 200 V R DS(on).
Irf640 Mosfet
105.11 Kb IRF640 moroccoAbstract: irf640 IRF640 IRF640FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF640 IRF640FI s s, ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value IRF640 VD S V DG R V GS Unit IRF640FI, operating area July 1993 1/6 IRF640/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb R th c-s Tl,. 6.5 13 1600 270 50 Max.
Unit S 2100 350 70 pF pF pF IRF640/FI ELECTRICAL, Operating Area for TO-220 Safe Operating Area for 3/6 IRF640/FI Thermal Impedance STMicroelectronics Original. 179.35 Kb IRF640 applications noteAbstract: irf640 IRF640, RF1S640SM Data Sheet June 1999 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Title, Components to PC Boards' Symbol BRAND IRF640 wer OSTs) uthor 1585.5 Features These are, integrated circuits.
![Irf640 Irf640](https://www.yumpu.com/xx/image/facebook/3375096.jpg)
File Number TO-220AB RF1S640SM TO-263AB D IRF640 RF1S640 G NOTE, ) er OCI O frk ©2001 Fairchild Semiconductor Corporation IRF640, RF1S640SM Rev. A IRF640, RF1S640SM TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings IRF640, RF1S640SM Fairchild Semiconductor Original. 149.87 Kb linear applications of power MOSFET IRF640Abstract: power MOSFET IRF640 IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power, to PC Boards' Symbol BRAND IRF640 TO-220AB RF1S640 TO-262AA RF1S640 RF1S640SM TO-263AB D IRF640 RF1S640 G NOTE: When ordering, use the entire part number. Add the, DRAIN GATE IRF640, RF1S640, RF1S640SM Rev. B IRF640, RF1S640, RF1S640SM TC = 25oC, Unless, Tpkg IRF640, RF1S640, RF1S640SM 200 200 18 11 72 ±20 125 1.0 580 -55 to 150 UNITS V V Fairchild Semiconductor Original. 316.82 Kb power MOSFET IRF640 fpAbstract: irf640 IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAYTM MOSFET TYPE V DSS R DS(on) ID IRF640 IRF640FP 200 V 200 V.
366.51 Kb IRF640 smdAbstract: IRF640 applications note IRF640, IRF640S SYMBOL QUICK REFERENCE DATA 'Trench' technology Low on-state resistance, specification N-channel TrenchMOSTM transistor IRF640, IRF640S AVALANCHE ENERGY LIMITING VALUES, specification N-channel TrenchMOSTM transistor IRF640, IRF640S REVERSE DIODE LIMITING VALUES AND, Semiconductors Product specification N-channel TrenchMOSTM transistor IRF640, IRF640S Normalised, Product specification N-channel TrenchMOSTM transistor IRF640, IRF640S Drain current, ID (A Philips Semiconductors Original. 820.87 Kb irf640Abstract: hexfet irf640 IRF640, Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) Qg (Max, G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF640PbF IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER, apply Document Number: 91036 S-81241-Rev. Download quattroruote gennaio 2014. A, 07-Jul-08 www.vishay.com 1 IRF640, SiHF640 Vishay, -81241-Rev. A, 07-Jul-08 IRF640, SiHF640 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise Vishay Siliconix Original.
1688.94 Kb IRF640 applications noteAbstract: IRF640 IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM S E M I C O N D U C T O R 16A and 18A, Ordering Information PART NUMBER PACKAGE D BRAND IRF640 TO-220AB IRF640 IRF641 TO, 5-1 File Number 1585.3 IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM TC = 25oC, Unless,. Tpkg IRF640, RF1S640, RF1S640SM 200 200 18 11 72 ±20 125, PARAMETER MIN TYP MAX UNITS IRF640, IRF642, RF1S640, RF1S640SM 200 -V Harris Semiconductor Original. 156.67 Kb irf640Abstract: IRF640 P CHANNEL MOSFET IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640F P.